AlGaN/GaN microwave HEMT transistors on monocrystalline GaN substrates
The project Pol-HEMT aims at developing a new type of microwave S-band HEMT transistor based on AlGaN/GaN structures grown on bulk semi-insulating GaN substrates.
The substrates of the diameter up to 1.5" will be fabricated by the ammonothermal method. MOVPE and MBE techniques will be used for the epitaxial growth of AlGaN/GaN HEMT structures. A number of specific processing steps will be developed including: definition of the active device area, RIE/ICP etching for ohmic contact and gate recesses, and through-wafer via hole fabrication. Reliability issues will be of particular concern.
The final project goal is to achieve 10 W output power at 4 GHz frequency.
Project No. PBS1/A3/9/2012 founded by National Centre for Research and Development
November 1st, 2012 - October 31st, 2015